Packaged semiconductor devices for high voltage with die edge protection

ABSTRACT

In a described example a device includes: a first corner formed between a circuit side surface of a semiconductor die and a first sidewall formed with a first depth extending along a side of the semiconductor die from the circuit side surface; a ledge having a planar surface formed parallel to the circuit side surface of the semiconductor die formed at the first depth from the circuit side surface at the first corner, and being perpendicular to the first sidewall; a second corner formed by an intersection of the planar surface of the ledge and a scribe lane sidewall of the semiconductor die, forming a second sidewall perpendicular to the circuit side surface; and portions of the circuit side surface of the semiconductor die, the first corner, the first sidewall, and the planar surface of the ledge covered by a passivation layer.

TECHNICAL FIELD

This disclosure relates generally to packaged semiconductor devices, andmore particularly to packaged semiconductor devices for high voltages.

SUMMARY

In a described example, a device includes: a first corner formed betweena circuit side surface of a semiconductor die and a first sidewallformed with a first depth extending along a side of the semiconductordie from the circuit side surface. A ledge is formed having a planarsurface parallel to the circuit side surface of the semiconductor dieformed at the first depth from the circuit side surface at the firstcorner, and being perpendicular to the first sidewall. A second corneris formed by an intersection of the planar surface of the ledge and ascribe lane sidewall of the semiconductor die, forming a second sidewallperpendicular to the circuit side surface. A passivation layer coversportions of the circuit side surface of the semiconductor die, the firstcorner, the first sidewall, and the planar surface of the ledge.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are perspective views of a semiconductor wafer withsemiconductor dies formed in the semiconductor wafer and separated byscribe streets, and an example semiconductor die.

FIG. 2A is a cross section of a dual inline package (DIP) for a packagedsemiconductor device and FIG. 2B is a prospective view of a DIP.

FIGS. 3A and 3B are cross sections of a no lead package for a packagedsemiconductor device and FIG. 3C is a perspective view of a quad flat nolead (QFN) package.

FIG. 4A is cross section of a no lead package for a semiconductor deviceand FIG. 4B is an expanded cross sectional view of an upper corner of asemiconductor die in the no lead package of FIG. 4A.

FIGS. 5A-5E are a series of cross sections illustrating example steps ina method for making semiconductor dies with an upper corner covered withpassivation.

FIG. 6 is a flow diagram of an example method for making a semiconductordie with an upper corner covered with passivation.

FIGS. 7A-7E are a series of cross sections illustrating steps in amethod for making a packaged semiconductor device for high voltage.

FIG. 8 is a flow diagram of an example method for making a packagedsemiconductor device for high voltage.

FIGS. 9A-9I are a series of cross sections illustrating steps in amethod for making a packaged semiconductor device for high voltage.

FIG. 10 is a flow diagram of an example method for making a packagedsemiconductor device for high voltage.

FIGS. 11A-11E are a series of cross sections illustrating steps in amethod for making a packaged semiconductor device for high voltage.

FIG. 12 is a flow diagram of an example method for making a packagedsemiconductor device for high voltage.

DETAILED DESCRIPTION

Corresponding numerals and symbols in the different figures generallyrefer to corresponding parts, unless otherwise indicated. The figuresare not necessarily drawn to scale. Elements may be described as“encapsulated” herein. When a semiconductor device package is formedusing mold compound, the packaged device is referred to as“encapsulated” and the process for molding may be referred to as“encapsulation”. As used herein, when a semiconductor die mounted to asubstrate is described as encapsulated, portions of the substrate remainexposed to form leads or terminals for the package, even though it isdescribed as “encapsulated” or even when it is described as being formedby “encapsulation.”

During a molding process, a substrate (for example, a lead frame) with asemiconductor device bonded to it is placed in an injection or transfermold. Mold compound, such as thermoset epoxy resin, is injected into themold to cover, or encapsulate, the semiconductor device and lead frameand form a packaged semiconductor device. In some examples, a lead framestrip is placed into a molding tool with several semiconductor devicesmounted to it and spaced from one another. After the mold compound isused to form package material over the semiconductor devices and thelead frame strip, the devices are cut apart to form single packagedsemiconductor devices by sawing through the mold compound and the leadframe strip in saw streets between the packaged semiconductor devices. A“semiconductor device” as used herein means a device fabricated using asemiconductor substrate. An example is an integrated circuit where oneor more active devices, such as transistors, are formed in a singledevice and are coupled together with conductive material to perform acircuit function. However, a semiconductor device also includes discretedevices, such as a single transistor, a diode, a resistor, a capacitoror an inductor formed on a semiconductor substrate. Arrays of passivedevices such as resistors or capacitors can also be formed as asemiconductor device, even when the device has no active devices.Sensors such as photosensitive cells and acoustic sensors can be formedas semiconductor devices.

As is further described hereinbelow, certain structures and surfaces aredescribed as “perpendicular” to one another. For purposes of thisdisclosure, two elements are “perpendicular” when the elements areintended to form a 90-degree angle at their intersection. However, theterm “perpendicular” as used herein also includes surfaces that mayslightly deviate from 90 degrees due to manufacturing tolerances. Theterm “bond pad” is used herein. A bond pad is a conductive elementformed on a circuit side surface of a semiconductor die, the bond pad iscoupled to devices in the semiconductor device and provides a surfacefor connecting a conductor such as a bond wire, ribbon bond, pillar,ball or bump. The bond pad can be formed of a conductor layer such ascopper or aluminum. Bond pads can also have additional platings toenhance bonding, such as nickel, gold, palladium, silver andcombinations of these to enhance wire bonding efficiency and to reducecorrosion or oxidation of copper. The platings can include electrolessnickel and immersion gold (ENIG) or electroless nickel, electrolesspalladium, immersion gold (ENEPIG) for example.

The term “high voltage” is used herein. In using semiconductor devices,typical systems use voltages between 1 and 6 volts, for example 1.8,3.3, 5 and 6 volt systems are used in battery powered systems,computers, and in some automotive systems. Increasingly there is a needfor integrated circuit and discrete components formed as semiconductordevices that are able to carry current at higher voltages, such as at orgreater than 30 volts and up to several hundred volts. The term “highvoltage” as used herein means a voltage equal to or greater than 30volts. Semiconductor devices coupled to high voltages can exhibitfailures due to the coupling of dies to higher voltages.

The term “scribe lane” is used herein. A scribe lane is a portion ofsemiconductor wafer between semiconductor devices. Sometimes in relatedliterature the term “scribe street” is used. Once processing is finishedand the semiconductor devices are complete, the semiconductor devicesare separated into individual semiconductor dies by severing thesemiconductor wafer along the scribe lanes. This process is referred toas “singulation.” Scribe lanes will be arranged on four sides of asemiconductor device on the wafer. When the semiconductor devices aresingulated from one another, rectangular semiconductor dies are formed.The term “saw streets” is used herein. As used herein, a saw street is aportion of a substrate such as a lead frame strip between interconnectedlead frames that have semiconductor devices mounted to them. Afterpackaging with mold compound is completed, the packaged semiconductordevices are singulated one from another by cutting through the leadframe strip and the mold compound in the saw streets to form individualsemiconductor packages. The term “gap” is used herein. As used herein, a“gap” is a space between two objects. The space can be filled with airor another material, in an example described herein a gap is filled withmold compound. The term “ledge” is used herein. As used herein, a“ledge” is a surface extending away from a wall or side of an object. Insome examples, with respect to a particular orientation of an object,the ledge can be horizontal and may extend away from a side surface ofthe object that can be vertical.

In example arrangements, the problem of coupling high voltage signals toa semiconductor die where failures can occur at the edge of asemiconductor die due to electrical shorting from the semiconductormaterial to a conductor is solved by forming a ledge at the edge of thesemiconductor die, and protecting the edge with a protective passivationlayer. The distance from a bond wire conductor or ribbon wire conductorto the semiconductor substrate is thereby increased, and failures arereduced or prevented when high voltage signals are carried by conductorscoupled to bond pads on the semiconductor die.

FIG. 1A is a projection view of a semiconductor wafer 102 aftermanufacture and prior to singulation. Rectangular shaped dies 108 coverthe surface of the wafer 102. The surface of 102 visible in FIG. 1A isthe processed side, sometimes called the “front side”, the “top side” orthe “circuit side” of wafer 102, the surface where semiconductorprocessing is performed to form devices. An opposing side, not visiblein FIG. 1A, lies on the opposite surface, and may be referred to as the“back side” of the wafer 102.

The rectangular shaped dies 108 are separated by horizontal scribe lanes(horizontal as the wafer 102 is oriented in FIG. 1A) 104 that form thefirst two sides of the rectangle and by vertical scribe lanes 106(again, as the wafer 102 is oriented in FIG. 1A) that form the secondtwo sides of the rectangular periphery of each die 108. After thesemiconductor wafer manufacturing is complete, the dies 108 aresingulated from one another by cutting through the semiconductor devicewafer 102 along the scribe lanes 104 and 106. The cuts can be donemechanically by sawing, by laser tools, or by using a laser to perform“stealth dicing” where laser energy forms cracks in the crystallinestructure of the semiconductor wafer. The cracks are then caused topropagate through the scribe lanes 104, 106 to separate the dies 108along the scribe lanes.

FIG. 1B is an expanded, projection view of one of the semiconductor dies108 after singulation. Sidewalls on the die 108 (referred to hereinbelowas “scribe lane sidewalls”) form when a cut is made through the wafer102 during the singulation process.

FIG. 2A illustrates in a cross section and FIG. 2B illustrates in aprojection view an example dual inline package (DIP). DIP packages haveexposed leads on two sides arranged in a line. In FIG. 2A similarreference labels are used for similar elements as are shown in FIG. 1A,for clarity. For example, die 208 in FIG. 2A corresponds to die 108 inFIG. 1A. Die attach layer 222 is an adhesive layer that attachessemiconductor die 208 to a die mount pad 212 of a substrate. In thearrangements, useful substrates can include: lead frames of copper orother conductive metals (such as Alloy 42); molded interconnectsubstrates (“MIS”); pre-molded lead frames (“PMLFs”) with lead frameconductors and mold compound in a preformed structure; tape based andfilm based substrates carrying conductors; ceramic substrates, laminatesubstrates with multiple layers of conductors and insulator layers; andprinted circuit board (“PCB”) substrates of ceramic, fiberglass orresin, or glass reinforced epoxy substrates such as FR4. In thisexample, the substrate is illustrated using a copper lead frame 215.Passivation layer 216 with openings over the bond pads 210 covers thecircuit side surface of the die 208. Substrate leads 214 are connectedto bond pads 210 on die 208 by wire bonds 218. In an alternativeexample, ribbon bonds can be used. The bond pads 210 are in turn coupledto conductors that electrically connect to circuitry in the die 208.Mold compound 220 covers the die 208, the bond wires 218, and portionsof the die mount pad 212 and portions of the leads 214. As can be seenin the cross section in FIG. 2A and also in the projection view of thedual in line package (DIP) in FIG. 2B, portions of the leads 214 in theDIP are not covered by mold compound 220. These portions remainuncovered to enable electrical contact between the packagedsemiconductor device 200 and traces on a PCB that is not shown, forclarity of illustration. For example, the packaged semiconductor die 200can be mounted on a PCB by inserting the uncovered portion of leads 214through holes in traces on a PCB, and then soldering leads 214 to thePCB traces.

FIGS. 3A-3B illustrate in cross sections, and FIG. 3C illustrates in aprojection view, an example no-lead package, such as a quad flat no-lead(“QFN”) package. In FIGS. 3A and 3B similar reference labels are usedfor similar elements as for elements shown in FIG. 2A, for clarity. Forexample, die 308 in FIGS. 3A and 3B corresponds to die 208 in FIG. 2A.FIG. 3B illustrates a magnified view of a corner portion of die 308.Passivation layer 316 with openings over the bond pads 310 covers acircuit side surface of the die 308. The circuit side surface of the die308 can be the upper most layer of interconnect, or can be a passivationlayer such as silicon dioxide or silicon nitride overlying the uppermost layer of interconnect. Die attach layer 322 bonds the non-circuitside of die 308 to the die mount pad 312 of a substrate. In this examplethe substrate is a copper lead frame 315. In an alternative arrangement,lead frame 315 is a conductive metal or a conductive metal alloy, forexample, Alloy 42. Leads 314 are connected to bond pads 310 on die 308by wire bonds 318. Mold compound 320 covers the die 308, the bond wires318, and portions of the leads 314.

As can be seen in FIG. 3A and in the projection view of FIG. 3C,portions of the leads 314 in a no-lead package are not covered by moldcompound 320 but remain uncovered to enable electrical contact to a PCB(not shown) by soldering the exposed portion of the leads 314 toconductive traces or lands on the PCB. The package mounting process canbe described as “surface mounting.” FIG. 3C is a projection view of acompleted QFN packaged semiconductor device 300.

FIG. 3B is an expanded view of a circuit side corner of the packagedsemiconductor device 300. FIG. 3B shows a portion of the semiconductordie 308 with a bond pad 310. A layer of passivation material 316 with anopening over the bond pad 310 covers the surface of the die 308. Thepassivation layer 316 may be a dielectric material such as silicondioxide, silicon nitride, silicon oxynitride, or polyimide. A portion ofthe bond wire 318 connects the bond pad 310 to the lead 314 (shown inFIG. 3A). Mold compound 320 covers the semiconductor die 308, thepassivation 316, and bond wire 318, and portions of leads 314, leavingother portions of leads 314 exposed.

The dies 308 are singulated by cutting through the scribe lanes (104 and106 in FIG. 1A) on the semiconductor wafer 102. The passivation layer316 on the semiconductor die 308 is cut through forming a sidewallcomprised of passivation layer 316 on the scribe lane sidewall 328 ofthe semiconductor die 308.

A corner 324 between the circuit side surface of the die 308 (uppersurface of die 308 as oriented in FIGS. 3A-3B and the scribe lanesidewall of the semiconductor die 308 is formed during singulation. Inthis arrangement, the upper surface of this corner 324 is covered withpassivation layer 316 and the scribe lane sidewall is covered with moldcompound 320.

Bond wire 318 can be close to this corner 324 in this packagedsemiconductor device 300. In operation or testing, when high voltages(10's or 100's of volts) are applied to the bond wire 318, the thickness332 of the mold compound can be insufficient to withstand the electricfield generated by the high voltage. An electrical short can formbetween the bond wire 318 and the corner 324 of die 308, causing thepackaged semiconductor device 300 to fail.

FIGS. 4A and 4B illustrate in cross sections an arrangement for apackaged semiconductor device for high voltages. In FIGS. 4A and 4B,similar reference labels are used for similar elements shown in FIGS. 3Aand 3B, for clarity. For example, die 408 in FIGS. 4A and 4B correspondsto die 308 in FIGS. 3A and 3B. Die attach layer 422 attaches die 408 toa die mount pad 412 of a substrate, in this example the substrate is alead frame 415. Leads 414 are connected to bond pads 410 on die 408 bywire bonds 418. Mold compound 420 covers the semiconductor die 408, thebond wires 418, and portions of the leads 414 and a portion of the diemount pad 412. The underside (the side opposite to the circuit side ofthe mounted die 408) of the lead frame 415 is not covered with moldcompound to enable electrical connections to be formed to traces on aPCB.

FIG. 4B is an expanded view of a corner of the circuit side of the die408 for a high voltage semiconductor device package. A first circuitside (upper side as oriented in FIG. 4B) corner 426 of the die 408 isshown with bond pad 410. The first corner 426 between the upper surface(as oriented in FIG. 4B) of the die 408 and a first sidewall 430 of thesemiconductor die 408 are covered on both the circuit side surface andthe first sidewall 430 with a passivation layer 416. The passivationlayer 416 also covers the circuit side (upper side as shown in FIG. 4B)surface of a second corner 424 formed by the circuit side surface of aformed ledge between the non-circuit side end of the first sidewall 430and the scribe lane sidewall 428. The distance from the second corner424 to the first corner can be between about 50 μm and 200 μm.

Passivation materials such as oxide, nitride, and polyimide that areused for passivation layer 416 have higher break down voltages than moldcompounds 420. The passivation layer 416 covering the first corner 426increases the voltage that can be applied on the bond wire 418 withoutcausing a short to form between the bond wire 418 and the first corner426.

The distance 434 between the bond wire 418 and the first corner 426 inFIG. 4B is similar to the distance 332 between the bond wire 318 and thecorner 324 in FIG. 3B. The semiconductor device package 400 in FIGS. 4Aand 4B can handle a higher voltage than the semiconductor device package300 in FIGS. 3A and 3B because the first corner 426 in FIG. 4B iscompletely covered with passivation layer 416, whereas the corner 324 inFIG. 3B is not.

The second corner 424 in FIG. 4B is similar to the corner 324 in FIG. 3Bin that the circuit side surface of both corners, 424 and 324, arecovered with passivation layers, 416 and 316, and the scribe lanesidewall side on both, 428 and 328, are covered with mold compound, 420and 320. The distance 432 between the second corner 424 in FIG. 4B andthe bond wire 418 is greater than the distance 332 between the corner324 in FIG. 3B and the bond wire 318. The greater distance 432 betweenthe bond wire 418 and the second corner 424 enables packagedsemiconductor device 400 to withstand a higher voltage on bond wire 418before the mold compound begins breaking down and shorting occurs.

In one arrangement the thickness of the passivation layer 416 on thefirst sidewall 430 is at least about 10 μm. A preferred distance betweenthe first corner 426 and the second corner 424 is 50 μm or more.

Cross sections in FIGS. 5A-5E illustrate example steps to manufacturethe semiconductor device package 400 shown in FIG. 4A. In FIGS. 5A-5Esimilar reference labels are used for similar elements shown in FIGS. 4Aand 4B, for clarity. For example, dies 508 in FIGS. 5A-5E correspond todie 408 in FIGS. 4A and 4B. The flow diagram of FIG. 6 illustratescorresponding method steps.

In FIG. 6, the method begins at step 605. In step 605 semiconductorwafer processes form semiconductor devices on a substrate or wafer up tothe final layer of interconnect and including the bond pads. FIG. 5Ashows a cross section of a portion of a semiconductor wafer 502 (see 102in FIG. 1A) with four dies 508 spaced by scribe lanes 506. Thesemiconductor dies 508 have bond pads 510 on the circuit side of thesemiconductor wafer (the upper surface of 502 as oriented in FIG. 5A).

Returning to FIG. 6, at step 610 trenches 540 are cut into the scribelanes between the semiconductor devices. First die corners 526 areformed at the top of the trench 540 between the surface of the dies andthe sidewall 530 of the trench 540. In an example method, mechanicalsawing is used to form the trenches. Chemical etching processes, dryetch processes, and laser etching processes can also be used. In FIG. 5Ba trench 540 with a width greater than the width of the scribe lane 506is sawed part way through the wafer 502 (see 104 and 106 in FIG. 1A). Inan example application shown in FIG. 5E, the scribe lane 506 is about 40μm wide and the trench 540 is about 80 μm wide. The trench 540 iscentered in the scribe lane 506 with about 20 μm of the trenchoverhanging the scribe lane 506 on both sides. A first upper corner 526is formed on the circuit side (upper surface as oriented in FIGS. 5A-5D)of the dies 508 and the sidewall 530 of the trench 540 for each side(four sides, although only two are shown in the cross sections of FIGS.5A-5D) for each die. The depth of the trench 540 is preferred to be atleast 50 μm.

Returning to FIG. 6, at step 615, a passivation layer is formed over thecircuit side surface of the semiconductor wafer and filing the trenches540. At step 620, openings are formed in the passivation layer to exposethe bond pads. In FIG. 5C a layer of passivation 516 fills the trenches540 and covers the circuit side surface of the dies 508 (except for thebond pads 510.) The passivation 516 covers the sidewalls 530 of thetrenches 540.

At step 625 in FIG. 6, the dies 508 are singulated from one another bycutting the semiconductor wafer through the scribe lanes and through thepassivation layer. FIG. 5D shows dies 508 after the individual dies aresingulated by cutting through the scribe lanes 506. The singulationprocess forms a second corner 524 on the dies 508 below the first corner526. The second corner 526 is formed between the bottom of the trench540 and the sidewall 528 of the scribe street 506. Singulation can beperformed using lasers, mechanical sawing, or stealth dicing tools toseparate the dies and cut through the passivation layer 516 andsubstrate 502. The singulated dies 508 in FIG. 5D are similar to the die408 in the packaged semiconductor device 400 in FIG. 4A. Passivationlayer 516 covers the surface of the semiconductor dies 508 and coversthe sidewall 530 on the first upper corner 526.

The singulation process removes the semiconductor material in scribelanes 506 by cutting through the passivation layer 516 in the trenches540, and by cutting through the scribe lanes 506 between the dies 508.About 20 μm of the trench 540 remains on both sides of the cut thatsingulated the dies 508. The second corner 524 is farther away from thecircuit side of the semiconductor dies 508 than the upper first corner526. The surface of this second corner 524 (bottom of trench 540) iscovered with passivation layer 516. The scribe lane sidewall 528 (secondsidewall) on the second lower corner 524 524 is exposed, as it wasformed by the cutting done in the die singulation process, afterpassivation layer 516 was completed.

FIGS. 7A-7E, illustrate in cross sectional views results ofmanufacturing steps for packaging singulated dies 708. In FIGS. 7A-7Esimilar reference labels are used for similar elements shown in FIGS.5A-5D, for clarity. For example, dies 708 in FIGS. 7A-7E correspond todies 508 in FIGS. 5A-5D. FIG. 8 is a flow diagram illustrating methodsteps corresponding to the results steps shown in FIGS. 7A-7E.

In FIG. 8, the method begins at step 805, where singulated dies such as708 in FIG. 7 are mounted on a lead frame strip. In FIG. 7A singulateddies 708 are shown placed with the circuit side “face up” (facing awayfrom the lead frame strip) and are positioned over die mount pads 712 inthe lead frame strip 715. FIG. 7A shows a lead frame strip with threelead frames connected together by the lead frame strip 715 in sawstreets 706. Lead frame strip 715 can be made of various conductivematerials such as copper, brass, and Alloy 42. Pre-molded leadframes(PMLFs) and molded interconnect substrate (MIS) substrates can be usedinstead of the lead frame strip 715 to form additional arrangements.

In FIG. 7B the singulated dies 708 are bonded to the die mount pads 712in the lead frame strip 715 using a die attach material 722 such as aconductive adhesive or solder. In an alternative a non-conductiveadhesive can be used. When a conductive adhesive is used as 722, the diepads 712 can be used as an electrical connection and may be bonded to aground trace when the packaged semiconductor device (described furtherhereinabove) is later mounted on a substrate such as a printed circuitboard (PCB) (not shown, for simplicity of illustration). When the diemount pads 712 form a ground terminal of the packaged semiconductordevice, this holds the semiconductor substrate of the dies 708 at groundpotential. The die mount pads 712 can be used as thermal conductors toremove heat from the die 708 in operation, and can also be used to placethe semiconductor material in the dies 708 at potentials other thanground when mounted to a PCB board.

Returning to the flow diagram in FIG. 8, at step 810 wire bonds areformed using bond wires 718 between the bond pads 710 on the dies 708and the lead frame leads 714 in lead frame strip 715 (see FIG. 7C).While only two bond wires are shown in the cross sections for each die,in a practical application several or even hundreds of bond wires can beused. The lead frame leads 714 are attached to system signal traces whenthe packaged semiconductor device (described hereinabove) is latermounted on a system board such as a PCB. The signal that is applied tothe bond pad 710 on the dies 708 through the lead frame lead 714 and thebond wire 718 can be ground or can be a voltage signal such as a lowvoltage signal (5 V, 3.3V, 1.8 V or less) or a high voltage signal (10'sto 100's or even 1000's of volts).

Returning to FIG. 8, at step 815, the semiconductor dies 708 and aportion of the lead frame strip 715 are covered in mold compound 720. InFIG. 7D the lead frame strip 715 with the singulated dies 708 bonded tothe die mounting pads 712 and with the bond wires 718 is encapsulated inor covered with mold compound 720. A bottom side of the lead frame strip715 (the side opposite to the circuit side of the mounted dies 708) suchas the bottom side of leads 714 and the bottom side of die mount pad 712are not covered with mold compound 720. By leaving these portions of thelead frames uncovered, electrical contact is enabled when the packagedsemiconductor devices 700 (see FIG. 7E) are mounted on a system board orsubstrate.

The dies 708 have a layer of passivation material 716 covered by a layerof mold compound 720 between the first upper corner 726 and the bondwire 718. The layer of passivation 716 over the first upper corners 726has a high breakdown voltage, and depending upon the thickness of layer716, can withstand 10's or even 100's of volts without breaking down.The second corners 724 in the dies 708 also have passivation 716covering the upper surface of a planar ledge that is parallel to thecircuit side surface of the semiconductor die. The ledge portion ofcorners 724 is lower, as oriented in FIG. 6D, than the circuit sidesurface. The second corners 724 also have mold compound 720 covering thesaw street sidewall 728. The thickness (see 432 in FIG. 4) of moldcompound 720 between the second corner 724 and the bond wire 718 isgreater than the thickness of mold compound 720 (see 434 in FIG. 4)between the first corner 726 and the bond wire 718. This greaterdistance prevents break down from the bond wire 718 to the second corner724 when high voltage (30 Volts or more) is applied.

Returning to FIG. 8, the next step in the flow diagram, 820, is tosingulate the packaged dies 700 from one another by cutting through themold compound 720 and the lead frame strip 716 along saw streets 706between the semiconductor dies. (See FIG. 7E).

The arrangement in FIGS. 7A through 7E is illustrated using an exampleno lead package such as a QFN, but other package types such as DIPs canalso be used. Leaded packages with leads extending away from the packagebody, and no lead packages such as 600 in FIG. 6E, can also be used.

FIGS. 9A-9I, illustrate, in cross sectional views, results ofmanufacturing steps for an alternative method of packaging singulateddies 708. In FIGS. 9A-9H similar reference labels are used for similarelements shown in FIGS. 5A-5D, for clarity. For example, dies 908 inFIGS. 9A-9I correspond to dies 508 in FIGS. 5A-5D. FIG. 10 is a flowdiagram illustrating method steps corresponding to the results stepsshown in FIGS. 9A-9I.

In FIG. 10, the method begins at step 1005, where singulated dies suchas 908 in FIG. 9A are mounted on a panel strip 954. The circuit side ofthe dies 908 is covered with a passivation layer 916 with openings inthe passivation layer exposing bond pads 910. Panel strip 954 iscomprised of panels 950, made of a plastic such as a polyimide orpolyester, mounted on a disposable substrate 952. Singulated dies 908with the circuit side facing the disposable substrate 952 are mounted inspaces between panels 950 on the disposable substrate 952. An adhesive951 can be used to bond the dies 908 to the panels 950. In FIG. 9Asingulated dies 908 are shown positioned over the panel strip 954 withthe circuit side facing the panel strip 954. FIG. 9B shows the panelstrip 950 with three dies 908 mounted on the panel strip 950.

In FIG. 9C, (step 1010, FIG. 10) a first packaging protection layer 956of a material such as a polyimide or an epoxy resin with silica fillersis formed on the non-circuit side of the dies 908 and on a first side ofthe panels 950. This first packaging protection layer 956 binds the dies908 and panels 950 together and provides reinforcement while handling insubsequent processing steps. The first packaging protection layer 956 isat least 30 μm thick. In an example arrangement the first packagingprotection layer 956 is 35 μm thick.

In FIG. 9D, (step 1015, FIG. 10) the disposable substrate 952 is removedfrom the circuit side of the dies 908 and from the second side of thepanels 950.

In FIG. 9 E, (step 1020, FIG. 10) a copper redistribution leadphotoresist pattern 958 is applied covering the circuit side of the dies908 and covering the second side of the panels 950. Openings are formedin the photoresist pattern 958 exposing the bond pads 910.

In FIG. 9F, (Step 1025, FIG. 10) copper is electroplated onto the bondpads 910 and filling the openings in the photoresist layer 958 to formcopper redistribution leads 960.

In FIG. 9G, the photoresist pattern 958 is removed and the circuit sideof the die 908 and the second side of the panels between each of thedies 908 are covered with a second packaging protection layer 962. Thesecond packaging protection layer 962 is a dielectric material such as apolyimide or build up material. The second packaging protection layer962 is at least 30 μm thick. In an arrangement the second packagingprotection layer 962 is 40 μm thick.

Bond pad openings are formed in the second packaging protection layer962 exposing the surface copper redistribution leads 960. The bond padopenings can be formed by exposure and develop if the packagingprotection layer 962 material is photo sensitive or by patterning andetching if it is not a photosensitive material. Alternatively, thepackaging protection layer 962 can be deposited using ink-jet printing,screen printing, or slit printing.

In FIG. 9H, individual dies 908 are singulated by cutting through thepackaging protection layers, 956 and 962, and the panels 950approximately midway between the dies 908.

FIG. 9I shows an expanded view of one of the singulated dies 908. Bothsides of the first corner 926 on the die 908 are covered withpassivation material 916 that has a high breakdown voltage. Secondcorner 924 is covered on the side facing the copper redistribution lead960 with passivation material 916 and on the sidewall with the adhesivelayer 951. The adhesive layer 951 can have a lower breakdown voltagelower than the passivation material 916. The greater distance 932 of thesecond corner 924 than the distance 934 of the first corner 926 from thecopper redistribution lead 960 enables a higher voltage to be applied tothe copper redistribution lead 960 without causing breakdown andshorting.

FIGS. 11A-11E, illustrate in cross sectional views results ofmanufacturing steps for an alternative method of packaging singulateddies 1108. In FIGS. 11A-11E similar reference labels are used forsimilar elements shown in FIGS. 5A-5D, for clarity. For example, dies1108 in FIGS. 11A-11E correspond to dies 508 in FIGS. 5A-5D. FIG. 12 isa flow diagram illustrating method steps corresponding to the resultssteps shown in FIGS. 11A-11E.

In FIGS. 11A and 11B (Step 1205, FIG. 12) semiconductor dies 1108 areflip chip mounted on substrate strip 1154. Substrate strip 1154 consistsof a substrate 1166 with conductive leads 1168 on the surface. Substrate1166 can be a circuit board such as fiberglass with conductive leads1168 on the surface. The substrate can also be molded interconnectsubstrates; pre-molded lead frames with lead frame conductors and moldcompound in a preformed structure; tape based and film-based substratescarrying conductors; ceramic substrates, laminate substrates withmultiple layers of conductors and insulator layers; and printed circuitboard substrates of ceramic, fiberglass or resin, or glass reinforcedepoxy substrates such as FR4.

The semiconductor dies 1108 have conductive posts 1162 capped with asolder ball 1164 on each bond pad 1110. The surface of the die 1108surrounding the conductive posts 1162 is covered with passivation layer1116.

In FIG. 11A the dies 1108 are inverted over the substrate strip 1154with the solder balls 1164 aligned to conductive leads 1168 on thesubstrate strip 1154. In FIG. 11B the solder balls are melted formingsolder bonds between the conductive posts 1162 and the leads 1168.

In FIG. 11C. (step 1210, FIG. 12) the surface of the substrate strip1154 and the semiconductor die 1108 are covered with a molding compound1120 such as a filled epoxy compound.

In FIG. 11D (step 1215, FIG. 12) individual semiconductor devicepackages are formed by cutting through the molding compound 1120 and thesubstrate 1166 approximately midway between the dies 1108.

FIG. 11E shows an expanded view of one of the packaged semiconductordies 1108. The first corner 1126 of the die 1108 facing the substrate1166 is covered on both the side facing the substrate 1166 and thesidewall with passivation layer 1116. The second corner 1124 is coveredon the side facing the substrate 1166 with the passivation layer 1116and on the sidewall with molding compound 1120. The passivation layer1116 has a higher breakdown voltage than the molding compound 1120. Thegreater distance 1132 of the second corner 1124 than the distance 1134of the first corner 1126 to the substrate lead 1168 enables a highervoltage to be applied to the substrate lead 1168 without break down ofthe mold compound and without causing shorting to the die 1108.

Modifications are possible in the described arrangements, and otheralternative arrangements are possible within the scope of the claims.

What is claimed is:
 1. A device, comprising: a first corner formedbetween a circuit side surface of a semiconductor die and a firstsidewall formed with a first depth extending along a side of thesemiconductor die from the circuit side surface; a ledge having a planarsurface formed parallel to the circuit side surface of the semiconductordie formed at the first depth from the circuit side surface at the firstcorner, and being perpendicular to the first sidewall; a second cornerformed by an intersection of the planar surface of the ledge and ascribe lane sidewall of the semiconductor die, forming a second sidewallperpendicular to the circuit side surface; and portions of the circuitside surface of the semiconductor die, the first corner, the firstsidewall, and the planar surface of the ledge covered by a passivationlayer.
 2. The device of claim 1, wherein a thickness of the passivationlayer is at least 10 μm.
 3. The device of claim 1, wherein thepassivation layer is a material that is one selected from a groupconsisting essentially of: silicon dioxide, silicon nitride, siliconoxynitride, polyimide, and combinations thereof.
 4. The device of claim1, wherein the first depth is between about 20 μm and 100 μm.
 5. Thedevice of claim 1, wherein a width of the ledge extending from the firstsidewall to the scribe lane sidewall is at least about 20 μm.
 6. Thedevice of claim 1, wherein the second sidewall is exposed from thepassivation layer.
 7. A packaged semiconductor device, comprising: asemiconductor die bonded to a conductive substrate, the semiconductordie having bond pads formed on a circuit side surface of thesemiconductor die; a first corner formed between the circuit sidesurface of the semiconductor die and a first sidewall formed with afirst depth extending into the semiconductor die from the circuit sidesurface; a ledge having a planar surface formed parallel to the circuitside surface of the semiconductor die at the first depth from thecircuit side surface at the first corner, and being perpendicular to thefirst sidewall; a second corner formed by an intersection of the planarsurface of the ledge and a scribe lane sidewall of the semiconductordie, the scribe lane sidewall perpendicular to the circuit side surface;and portions of the circuit side surface of the semiconductor die, thefirst corner, the first sidewall, and the planar surface of the ledgecovered by a passivation layer; openings in the passivation layerexposing the bond pads of the semiconductor die; a conductor coupling abond pad of the semiconductor die to a lead on the conductive substrate;a gap between the passivation layer and the conductor; and mold compoundcovering the passivation layer, covering the scribe lane sidewall,covering the conductor, filling the gap, covering the semiconductor dieand covering a portion of the conductive substrate.
 8. The packagedsemiconductor device of claim 7, wherein the conductor is a bond wire.9. The packaged semiconductor device of claim 7, further comprising acopper redistribution lead over the passivation layer, the copperredistribution lead contacting the bond pad, a packaging protectionlayer covering the copper redistribution lead; and an opening in thepackaging protection layer exposing a surface of the copperredistribution lead.
 10. The packaged semiconductor device of claim 7,wherein the conductor is a metal post with a first end of the metal postconnected to the bond pad, and a second end of the metal post connectedto the bond pad.
 11. The packaged semiconductor device of claim 7,wherein a thickness of the passivation layer is at least 10 μm.
 12. Thepackaged semiconductor device of claim 7, wherein the passivation layeris one selected from a group consisting essentially of: silicon dioxide,silicon nitride, silicon oxynitride, and polyimide.
 13. The packagedsemiconductor device of claim 7, further comprising: the scribe lanesidewall covered with and in contact with mold compound.
 14. Thepackaged semiconductor device of claim 13, wherein a distance betweenthe second corner and the first corner is between about 20 μm and 100μm.
 15. The packaged semiconductor device of claim 13, wherein a widthof the ledge from the first sidewall to the scribe lane sidewall is atleast 20 μm.
 16. A method for making a packaged semiconductor device,comprising: forming trenches in scribe lanes between semiconductor dieson a circuit side surface of a semiconductor wafer, the semiconductordies having bond pads on the circuit side surface, the trench formingcreating first corners on the semiconductor devices at intersectionsbetween the circuit side surface of the semiconductor wafer and a firstsidewall of the trenches, the trenches having a first width about 40 μmwider than a second width of the scribe lanes, the trenches extendinginto the semiconductor wafer from the circuit side surface to a firstdepth; filling the trenches and covering the circuit side surface of thesemiconductor wafer with a passivation layer; opening portions of thepassivation layer to expose the bond pads of the semiconductor dies; andsingulating the semiconductor dies from one another by cutting throughand removing the passivation layer and material of the semiconductorwafer from the scribe lanes, the singulating forming second corners onthe semiconductor dies at intersections between ledges that are a bottomof the trenches lying parallel to the circuit side surface of thesemiconductor dies and a second sidewall, the ledges and the secondsidewalls formed by cutting away semiconductor material in the scribelanes, the passivation layer covering the first corners, the firstsidewalls, and the ledges of the semiconductor dies, the second sidewallbeing exposed from the passivation layer.
 17. The method of claim 16,and further comprising: mounting ones of the singulated semiconductordies on a substrate strip; coupling the bond pads of the semiconductordies to leads on the substrate strip with conductors; covering thesemiconductor dies, the conductors, and portions of the substrate stripwith mold compound; and singulating the packaged semiconductor devicesfrom one another by cutting through the mold compound and the substratestrip in saw streets between the semiconductor dies.
 18. The method ofclaim 16, wherein the passivation layer is one selected from a groupconsisting essentially of: silicon dioxide, silicon nitride, siliconoxynitride, polyimide, and combinations thereof.
 19. The method of claim16, wherein the depth of the trench is 20 μm and 100 μm.
 20. The methodof claim 16, wherein the passivation layer covering the first corner hasa thickness of at least 10 μm.
 21. The method of claim 16, wherein ashortest distance between the second corner and the first corner isabout 20 μm.